—— NCEPOWER PRODUCT APPLICATION CASE INTRODUCTION ——
—— MOSFET ——
▋ Medium and low voltage Power MOSFET (20V-40V&50-250)
Low voltage Power MOSFET (20V-40V)
Medium voltage Power MOSFET (50V-250V)
Product features：
- High reliability, consistency, and stability
- High power and high current processing capacity
- Extremely low conduction resistance
- Extremely low gate charge
- Good resistance to avalanche impact
- High anti-static ability
Product application:
- Lithium battery protection module
- Conversion switch/LED display/LCD monitor
- Motor control/inverter/switching power supply
- Laptop/mobile phone power management
Product features:
- Low on-resistance, low gate charge
- High heat dissipation capacity, high junction temperature, high current continuous conduction ability
- High EAS capability (100% UIS testing)
- High consistency and repeatability of electrical parameters
- Special process, high anti-static capability (ESD)
Product application:
- Electric vehicle controller
- Switching power supply, UPS power supply, industrial control power supply, solar power supply, chassis power supply, inverter, power supply, lighting power supply, customized power supply
- Charger, welding machine, electromechanical equipment, etc
▋ Super Junction MOSFET（600V-900V）
By utilizing advanced charge balance technology, New Jieneng has launched the second generation of super junction MOSFET series products, which significantly improves the current density per unit area on the basis of the first generation of super junction MOSFET products. The product features a 40% reduction in conduction resistance (Rdson * A), a 12% reduction in switching loss, and a 1.7% improvement in total energy efficiency. We provide circuit designers with a variety of voltage current options ranging from 600V-900V to 4A-20A, while also offering you different power options from SOP-8 to TO-247, achieving less board space consumption and improved reliability.
By adopting leading single-layer epitaxial process technology, a new product series of 700V-900V has been added to the second generation of superjunction MOSFETs, providing more sufficient withstand voltage margin for system applications, simplifying circuit design difficulty, and improving performance
High system reliability. These products are widely suitable for lighting applications with higher requirements for system efficiency, various power supplies, adapters, and chargers for smartphones and tablets.
Product features:
- Excellent power conversion efficiency
- The extremely low conduction power loss comes from the extremely low characteristic conduction resistance (Ron * A)
- The extremely low switching power loss and driving power loss come from the extremely low FOM (Ron * Qg)
- Smaller packaging volume
- Excellent EAS capability (100% EAS testing)
Product application:
- Power supply for computers and servers - lower power loss
- Adapters (laptops, printers, etc.) - lighter and thinner
- Lighting (HID/LED lighting, industrial lighting, road lighting, etc.) - Higher power conversion efficiency
- Consumer electronics products (LCD TVs, plasma TVs, etc.) - lighter, thinner, and more energy-efficient
▋ New generation 600-650V super junction Power MOSFET (SJ-MOS Ⅱ series)
The new generation 600-650V super junction Power MOSFET SJ-MOS II series products adopt advanced super junction withstand voltage principle and more optimized design structure. On the basis of the original SJ-MOS I series products, the product's on resistance and grid charge are further reduced, which is more conducive to improving the system efficiency.
Product features:
- Lower conduction resistance is beneficial for reducing conduction loss
- Extremely low gate charge, providing faster switching speed
- Smaller packaging volume under the same specifications, making the system more lightweight
- Better consistency ensures the continuous and stable operation of the system
- 100% avalanche Achievement test to ensure reliable product quality
Product application:
- LED lighting
- adapter
- PC power supply
- consumer electronics
Comparison Table of Parameters for 600V 18A~22A MOSFETs of Similar Specifications
|
Rds（on）max. |
Qgtyp. |
|
|
某国产普通VDMOS |
0.45Ω |
70nC |
|
某进口普通VDMOS |
0.35Ω |
70nC |
|
某进口最新SJMOS |
0.19Ω |
63nC |
|
NCESJ-MOSⅠ |
0.19Ω |
55nC |
|
NCESJ-MOSⅡ |
0.18Ω |
45nC |
Comparison of schematic diagrams between ordinary VDMOS and SJ-MOS
Comparison of 650V power MOSFETFOM=Rdson. max * Qg
Comparison of parameters of 600V 18A -22A MOSFETs with similar specifications
▋ 650V SJ-MOS II partial products and corresponding packaging types display
▋ New generation 600-650V super junction Power MOSFET (SJ-MOS Ⅱ series)
Adopting advanced superjunction voltage withstand principle, the new 700V-900VSJMOS II series products have been launched, further optimizing the internal structure of the chip, providing sufficient voltage withstand margin for system applications, simplifying system design difficulty, improving system reliability, and meeting customers' needs for high voltage, low conduction resistance, and high efficiency superjunction MOSFETs.
Features and advantages:
- Higher withstand voltage provides more sufficient margin for system design and application
- Lower conduction resistance is beneficial for reducing conduction loss
- Extremely low gate charge, providing faster switching speed
- Smaller packaging volume under the same specifications, making the system more lightweight
- 100% avalanche Achievement test to ensure reliable product quality
Application:
- forward converter
- Quasi resonant flyback circuit
- adapter
- solar inverter
- Industrial rectification
Comparison of 700-900V SJ-MOS II FOM
Development status of SJ-MOS series products
▋ New generation 700-900V super junction Power MOSFET SJ-MOS Ⅱ series
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