—— NCEPOWER PRODUCT APPLICATION CASE INTRODUCTION ——
—— IGBT ——
▋ IGBT(1200V-1350V)
The new generation IGBT of NECPOWER adopts Trench Field Stop technology with a groove structure, which greatly increases the power density of the device. Through the advanced Ultra Thin Wafer Process, the Field Stop structure is used at the extreme of chip collection, significantly reducing the saturation on voltage drop (Vce (sat)) and off loss (Eoff) of the device compared to the previous generation products, The power loss of the device (the sum of conduction loss and switching loss) has been reduced by 33%, and is equipped with an independent constant voltage fast recovery diode (FRD), making it suitable for various soft switching applications such as electromagnetic heating.
The new generation of 1350V product series elevates the breakdown voltage of devices to new standards and ensures that products still have stable and consistent electrical parameters and firm reliability in harsh environments. At the same time, the new generation IGBT series products adopt advanced carrier control technology, which enables devices to achieve lower power loss while also having stronger avalanche and short-circuit current tolerance. Compared with the previous generation products, the short-circuit current tolerance of the new generation FS IGBT series products has increased by 50%, reaching the industry-leading level.
Product Features:
Product Application:
▋ VCES: 1200V-1350V LPT IGBT Product List